EEPROM
Electrically Erasable Programmable Read-Only Memory — the non-volatile storage technology used in NFC chips. EEPROM retains data without power and can be rewritten electrically, unlike ROM which is factory-programmed.
What Is EEPROM?
EEPROM (Electrically Erasable Programmable Read-Only Memory) is the non-volatile memory technology used in virtually all NFC tag chips. Unlike volatile memory that loses contents when power is removed, EEPROM retains stored data indefinitely without any battery or external power — a characteristic fundamental to NFC's value proposition.
How EEPROM Works
EEPROM stores data using floating-gate transistors. Each cell has a MOSFET with an additional "floating gate" surrounded by insulating oxide:
- Programming (writing a 0): A high voltage pulse forces electrons onto the floating gate via Fowler-Nordheim tunneling.
- Erasing (writing a 1): A reverse voltage pulse removes electrons.
- Reading: The charge presence or absence shifts the transistor's threshold voltage, detected as 0 or 1.
EEPROM Characteristics in NFC Chips
| Parameter | Typical Value | Notes |
|---|---|---|
| Data retention | 10 years (at 25 C) | Decreases at elevated temperatures |
| Write endurance | 100,000 cycles | Some chips support 1,000,000+ |
| Write time per page | 3-5 ms | Affects bulk programming speed |
| Programming voltage | 10-15V (internal) | Generated by on-chip charge pump |
Memory Organization
- Type 2 tags (NTAG, Ultralight): 4-byte pages. NTAG 213 has 45 pages (144 bytes user memory).
- Type 4 tags (DESFire): Variable-length files within applications.
- Type 5 tags (ICODE): 4-byte blocks with different addressing.
EEPROM vs Other Memory in NFC
| Type | Volatile? | Endurance | NFC Use |
|---|---|---|---|
| EEPROM | No | 100K-1M | Primary data storage |
| SRAM | Yes | Unlimited | NTAG I2C buffer |
| ROM | No | Read-only | UID, factory config |
| OTP | No | 1 cycle | Lock bits |
Write Endurance and Temperature
Applications updating frequently (counters, loyalty stamps) can approach the 100,000-cycle limit. A tag updated once per minute exhausts 100K cycles in ~70 days. For high-frequency writes, select chips with extended endurance or implement wear-leveling across memory blocks.
Temperature affects data retention: at 85 degrees Celsius, retention drops to 1-2 years. Automotive and outdoor applications should account for this when planning data refresh cycles.
Related Terms
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The NFC glossary is a comprehensive reference of technical terms, acronyms, and concepts used in Near Field Communication technology. It is designed for developers, product managers, and engineers who work with NFC and need clear definitions of terms like NDEF, APDU, anti-collision, and ISO 14443.
Each glossary term is cross-referenced with related NFC chips, standards, and other terms. For example, the term 'AES-128' links to chips that support AES encryption (NTAG 424 DNA, DESFire EV2/EV3), and the term 'ISO 14443' links to all chips compliant with that standard.
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