Hardware

EEPROM

Electrically Erasable Programmable Read-Only Memory — the non-volatile storage technology used in NFC chips. EEPROM retains data without power and can be rewritten electrically, unlike ROM which is factory-programmed.

También conocido como: EEPROM

What Is EEPROM?

EEPROM (Electrically Erasable Programmable Read-Only Memory) is the non-volatile memory technology used in virtually all NFC tag chips. Unlike volatile memory that loses contents when power is removed, EEPROM retains stored data indefinitely without any battery or external power — a characteristic fundamental to NFC's value proposition.

How EEPROM Works

EEPROM stores data using floating-gate transistors. Each cell has a MOSFET with an additional "floating gate" surrounded by insulating oxide:

  • Programming (writing a 0): A high voltage pulse forces electrons onto the floating gate via Fowler-Nordheim tunneling.
  • Erasing (writing a 1): A reverse voltage pulse removes electrons.
  • Reading: The charge presence or absence shifts the transistor's threshold voltage, detected as 0 or 1.

EEPROM Characteristics in NFC Chips

Parameter Typical Value Notes
Data retention 10 years (at 25 C) Decreases at elevated temperatures
Write endurance 100,000 cycles Some chips support 1,000,000+
Write time per page 3-5 ms Affects bulk programming speed
Programming voltage 10-15V (internal) Generated by on-chip charge pump

Memory Organization

  • Type 2 tags (NTAG, Ultralight): 4-byte pages. NTAG 213 has 45 pages (144 bytes user memory).
  • Type 4 tags (DESFire): Variable-length files within applications.
  • Type 5 tags (ICODE): 4-byte blocks with different addressing.

EEPROM vs Other Memory in NFC

Type Volatile? Endurance NFC Use
EEPROM No 100K-1M Primary data storage
SRAM Yes Unlimited NTAG I2C buffer
ROM No Read-only UID, factory config
OTP No 1 cycle Lock bits

Write Endurance and Temperature

Applications updating frequently (counters, loyalty stamps) can approach the 100,000-cycle limit. A tag updated once per minute exhausts 100K cycles in ~70 days. For high-frequency writes, select chips with extended endurance or implement wear-leveling across memory blocks.

Temperature affects data retention: at 85 degrees Celsius, retention drops to 1-2 years. Automotive and outdoor applications should account for this when planning data refresh cycles.

Related Terms

Related Guides

Preguntas frecuentes

The NFC glossary is a comprehensive reference of technical terms, acronyms, and concepts used in Near Field Communication technology. It is designed for developers, product managers, and engineers who work with NFC and need clear definitions of terms like NDEF, APDU, anti-collision, and ISO 14443.

Each glossary term is cross-referenced with related NFC chips, standards, and other terms. For example, the term 'AES-128' links to chips that support AES encryption (NTAG 424 DNA, DESFire EV2/EV3), and the term 'ISO 14443' links to all chips compliant with that standard.

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